丝印：285N4F7；Package：PowerFLAT；Automotive-grade N-channel 40 V, 0.9 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Descripti

文件：942.7 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道40 V、1.05 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • Designed for automotive applications and AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness \n• Wettable flank package;

ST

意法半导体

DFN5X6

STM

信盛精工

上传：深圳市金芯世纪电子有限公司

DFN5X6

ST

上传：深圳诚思涵科技有限公司

DFN5X6

STM

信盛精工

上传：深圳市远进半导体有限公司