首页>STL285N4F7AG>规格书详情
STL285N4F7AG数据手册ST中文资料规格书
STL285N4F7AG规格书详情
描述 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
特性 Features
• Designed for automotive applications and AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
• Wettable flank package
技术参数
- 制造商编号
:STL285N4F7AG
- 生产厂家
:ST
- Package
:PowerFLAT 5x6 WF
- Grade
:Automotive
- VDSS(V)
:40
- RDS(on)_max(@ VGS=10V)(Ω)
:0.0011
- Drain Current (Dc)_max(A)
:120
- PTOT_max(W)
:188
- Qg_typ(nC)
:67
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
2023+ |
PowerFLAT-5x6-8 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
询价 | ||
ST/意法半导体 |
24+ |
PowerFLAT-5x6-8 |
16900 |
原装现货,实单价优 |
询价 | ||
STMicroelectronics |
2022+ |
8-PowerVDFN |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
STMicroelectronics |
21+ |
PowerFlat?(5x6) |
3000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST/意法半导体 |
25 |
PowerFLAT-5x6-8 |
6000 |
原装正品 |
询价 | ||
ST |
25+ |
N/A |
15563 |
原装现货17377264928微信同号 |
询价 | ||
ST/意法半导体 |
23+ |
PowerFLAT-5x6-8 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
24+ |
PowerFLAT-5x6-8 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
询价 | ||
ST/意法半导体 |
21+ |
PowerFLAT-5x6-8 |
8860 |
原装现货,实单价优 |
询价 |