首页>STL26N60DM6>规格书详情
STL26N60DM6中文资料N沟道600 V、175 mOhm典型值、15 A MDmesh DM6功率MOSFET，PowerFLAT 8x8 HV封装数据手册ST规格书
STL26N60DM6规格书详情
描述 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
技术参数
- 制造商编号
：STL26N60DM6
- 生产厂家
：ST
- Package
：PowerFLAT 8x8 HV
- Grade
：Industrial
- VDSS(V)
：600
- RDS(on)_max(@ VGS=10V)(Ω)
：0.215
- Drain Current (Dc)_max(A)
：18
- PTOT_max(W)
：110
- Qg_typ(nC)
：24
- Features
：Fast recovery diode
- Reverse Recovery Time_typ(ns)
：100
- Qrr_typ(nC)
：350
- Peak Reverse Current_nom(A)
：7
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
8-PowerVDFN |
15628 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
ST |
2447+ |
PowerFlat8x8 |
9657 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
25+ |
PowerFLAT |
32360 |
ST/意法全新特价STL26N60DM6即刻询购立享优惠#长期有货 |
询价 | ||
ST |
24+ |
Power |
25836 |
新到现货，只做全新原装正品 |
询价 | ||
ST |
24+ |
Power |
5000 |
全新原装正品,现货销售 |
询价 | ||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
ST |
23+ |
Power |
6000 |
正规渠道,只有原装! |
询价 | ||
ST |
23+ |
Power |
20000 |
询价 | |||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 |
