STL45P3LLH6

丝印：45P3LLH6；Package：PowerFLAT；P-channel -30 V, 11 m廓 typ., -45 A STripFET??H6 Power MOSFET in a PowerFLAT??5x6 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™H6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness 

STL45P3LLH6

P沟道-30 V、11 mOhm典型值、-45 A STripFET H6功率MOSFET，PowerFLAT 5x6封装; • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n\n