丝印：45P3LLH6；Package：PowerFLAT；P-channel -30 V, 11 m廓 typ., -45 A STripFET??H6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness 

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STMICROELECTRONICS

意法半导体

P沟道-30 V、11 mOhm典型值、-45 A STripFET H6功率MOSFET，PowerFLAT 5x6封装

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

DFN5X6

STM

信盛精工

上传：深圳市金芯世纪电子有限公司

DFN5X6

ST

上传：深圳诚思涵科技有限公司

DFN5X6

STM

信盛精工

上传：深圳市远进半导体有限公司