N-channel 600 V, 0.115 typ., 21 A MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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STMICROELECTRONICS

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N沟道600 V、115 mOhm典型值、21 A MDmesh M6功率MOSFET，PowerFLAT 8x8 HV封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

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N-channel 600 V, 105 m廓 typ., 25 A, MDmesh M6 Power MOSFET in a TO?멛L package

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N-channel 600 V, 105 m typ., 25 A, MDmesh™ M6 Power MOSFET in a TO-220 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmeshTM M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family o

文件：256.76 Kbytes 页数：13 Pages

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N-channel 600 V, 105 m typ., 25 A, MDmeshTM M6 Power MOSFET in a TO-247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：266.15 Kbytes 页数：13 Pages

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