N-channel 600 V, 105 m typ., 25 A, MDmeshTM M6 Power MOSFET in a TO-247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：266.15 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V TO247

STMICROELECTRONICS

意法半导体

N-channel 600 V, 105 m typ., 25 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：255.85 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 105 m typ., 25 A, MDmesh M6 Power MOSFET in an I2PAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：430.5 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.115 typ., 21 A MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：379.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体