STL36N60M6

N沟道600 V、91 mOhm典型值、25 A MDmesh M6功率MOSFET，PowerFLAT 8x8 HV封装; • Reduced switching losses \n• Lower RDS(on) x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.\n\n

STL36N60M6

丝印：36N60M6；N-channel 600 V, 91 m廓 typ., 25 A MDmesh??M6 Power MOSFET in a PowerFLAT??8x8 HV package

STB36N60M6

N-channel600V,85mΩtyp.,30AMDmesh™M6PowerMOSFETinaD²PAKpackage

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

STF36N60M6

N-channel600V,85mtyp.,30AMDmeshTMM6PowerMOSFETinaTO-220FPpackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STO36N60M6

N-channel600V,85m廓typ.,30A,MDmeshM6PowerMOSFETinaTO?멛Lpackage

STP36N60M6

N-channel600V,85mtyp.,30AMDmeshTMM6PowerMOSFETsinTO-220andTO-247packages

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof

STW36N60M6

N-channel600V,85mtyp.,30AMDmeshTMM6PowerMOSFETsinTO-220andTO-247packages

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof