N沟道600 V、91 mOhm典型值、25 A MDmesh M6功率MOSFET，PowerFLAT 8x8 HV封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

ST

意法半导体

丝印：36N60M6；N-channel 600 V, 91 m廓 typ., 25 A MDmesh??M6 Power MOSFET in a PowerFLAT??8x8 HV package

文件：418.34 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 85 m廓 typ., 30 A, MDmesh M6 Power MOSFET in a TO?멛L package

文件：1.5619 Mbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 85 m typ., 30 A MDmeshTM M6 Power MOSFETs in TO-220 and TO-247 packages

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：803.34 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 85 m typ., 30 A MDmeshTM M6 Power MOSFETs in TO-220 and TO-247 packages

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：803.34 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体