丝印：36N60M6；Package：D2PAK；N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a D²PAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

文件：1.00066 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：36N60M6；N-channel 600 V, 91 m廓 typ., 25 A MDmesh??M6 Power MOSFET in a PowerFLAT??8x8 HV package

文件：418.34 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：36N60M6；Package：TO-LLtypeA；N-channel 600 V, 85 m廓 typ., 30 A, MDmesh M6 Power MOSFET in a TO?멛L package

文件：1.5619 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体