STB36N60M6

Marking：36N60M6；Package：D2PAK；N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a D²PAK package

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

STF36N60M6

N-channel600V,85mtyp.,30AMDmeshTMM6PowerMOSFETinaTO-220FPpackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL36N60M6

N-channel600V,91m廓typ.,25AMDmesh??M6PowerMOSFETinaPowerFLAT??8x8HVpackage

STO36N60M6

N-channel600V,85m廓typ.,30A,MDmeshM6PowerMOSFETinaTO?멛Lpackage

STP36N60M6

N-channel600V,85mtyp.,30AMDmeshTMM6PowerMOSFETsinTO-220andTO-247packages

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof

STW36N60M6

N-channel600V,85mtyp.,30AMDmeshTMM6PowerMOSFETsinTO-220andTO-247packages

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof