N-channel 600 V, 85 m typ., 30 A MDmeshTM M6 Power MOSFET in a TO-220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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N沟道600 V、85 mOhm典型值、30 A MDmesh M6功率MOSFET，TO-220FP封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

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N-channel 600 V, 91 m廓 typ., 25 A MDmesh??M6 Power MOSFET in a PowerFLAT??8x8 HV package

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N-channel 600 V, 85 m廓 typ., 30 A, MDmesh M6 Power MOSFET in a TO?멛L package

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STMICROELECTRONICS

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N-channel 600 V, 85 m typ., 30 A MDmeshTM M6 Power MOSFETs in TO-220 and TO-247 packages

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：803.34 Kbytes 页数：16 Pages

STMICROELECTRONICS

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