| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：36NM60N；Package：D2PAK；Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features •Designedforautomotiveapplicationsand AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：36NM60N；Package：TO-247；N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247 Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh™technology.Thisrevolutionary PowerMOSFETassociatesanewve | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：36NM60ND；Package：D2PAK；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description TheseFDmesh™IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh™ technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：36NM60ND；Package：TO-247；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description TheseFDmesh™IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh™ technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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