STW36NM60ND中文资料意法半导体数据手册PDF规格书

厂商型号	STW36NM60ND
功能描述	Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II
丝印标识	36NM60ND
封装外壳	TO-247
文件大小	1.36347 Mbytes
页面数量	18 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 12:00:00
人工找货	STW36NM60ND价格和库存，欢迎联系客服免费人工找货

描述 Description

These FDmesh™ II Power MOSFETs with

intrinsic fast-recovery body diode are produced

using the second generation of MDmesh™

technology. Utilizing a new strip-layout vertical

structure, these revolutionary devices feature

extremely low on-resistance and superior

switching performance. They are ideal for bridge

topologies and ZVS phase-shift converters.

特性 Features

• Designed for automotive applications and

AEC-Q101 qualified

• 100 avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

• Extremely high dv/dt and avalanche

capabilities

Applications

• Automotive switching applications

型号：
STW36NM60ND
制造商：
STMicroelectronics
功能描述：
POWER MOSFET - Rail/Tube
功能描述：
MOSFET N-CH 600V 29A TO-247
功能描述：
STW36NM60ND Series N-Channel 600 V 110 mOhm FDmesh II Power Mosfet - TO-247-3