37

型号：AZ3705-01F.R7G；Package：DFN2020P3E；Transient Voltage Suppressing Device For ESD/Transient/Surge Protection

Features
ESDprotectforonelinewithuni-directional
Providetransientprotectionforonelineto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)250A(8/20ms)
Suitablefor,4.5Vandbelow,operating voltageapplications
2.0mmx

37

型号：BZX384-A18；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

37

型号：BZX384-A18；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A)tolerancerange.Theseries includes37breakdownvoltageswithnominalworkingvoltagesfrom2.4Vto

37

型号：BZX384-A18-Q；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

37

型号：DTA043EEB；Package：SOT-416FL；PNP -100mA -50V Digital Transistor

Features 1)Built-InBiasingResistors,R1=R2=4.7kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy. 4)Co

37

型号：DTA043EM；Package：SOT-723；PNP -100mA -50V Digital Transistor

Features 1)Built-InBiasingResistors,R1=R2=4.7kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy. 4)Co

37

型号：DTA043EUB；Package：SOT-323FL；PNP -100mA -50V Digital Transistor

Features 1)Built-InBiasingResistors,R1=R2=4.7kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy. 4)Co

37

型号：PD3S160Q-7；Package：POWERDI323；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features GuardRingDieConstructionforTransientProtection HighSurgeCapability Ultra-SmallSurfaceMountPackage Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAPCapable(Note4)

37

型号：PDTA143ZE；Package：SC-75；PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

37

型号：PDTA143ZE；Package：SOT-416；PNP resistor-equipped transistors R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

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