STB36NM60ND芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
STB36NM60ND	文件：1.36347 Mbytes Page：18 Pages	丝印：36NM60ND；Package：D2PAK；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa 文件：1.36347 Mbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STW36NM60ND	文件：1.36347 Mbytes Page：18 Pages	丝印：36NM60ND；Package：TO-247；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa 文件：1.36347 Mbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多36NM60ND供应商更新时间2025-9-21 8:48:00