N-channel 600 V, 85 m typ., 30 A MDmeshTM M6 Power MOSFETs in TO-220 and TO-247 packages

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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N沟道600 V、85 mOhm典型值、30 A MDmesh M6功率MOSFET，TO-247封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one o • Reduced switching losses \n• Lower RDS(on) x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

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N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a D²PAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

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N-channel 600 V, 85 m typ., 30 A MDmeshTM M6 Power MOSFET in a TO-220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：260.7 Kbytes 页数：13 Pages

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N-channel 600 V, 91 m廓 typ., 25 A MDmesh??M6 Power MOSFET in a PowerFLAT??8x8 HV package

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