Switching applications

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

文件：1.26206 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.135 Ohm典型值、15 A MDmesh M5功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-bas • Worldwide best RDS(on)* area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance;

ST

意法半导体

N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched am

文件：1.66434 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.35 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：420.85 Kbytes 页数：2 Pages

ISC

无锡固电