N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched am

文件：1.66434 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.35 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.124 Ohm典型值、22 A MDmesh M5功率MOSFET，TO-220封装

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

isc N-Channel MOSFET Transistor

文件：420.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched am

文件：1.66434 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体