STL40C30H3LL

丝印：40C30H3L；Package：PowerFLAT；N-channel 30 V, 0.019 廓 typ., 10 A, P-channel 30 V, 0.024 廓 typ.,8 A STripFET??VI Power MOSFET in a PowerFLAT 5x6 d. i. package

Description ThisdeviceisacomplementaryN-channelandPchannelPowerMOSFETdevelopedusing STripFET™V(P-channel)andSTripFET™VI DeepGATE™(N-channel)technologies.The resultingdeviceexhibitslowon-stateresistance andanFOMamongthelowestinitsvoltage class. Features •R

STL40C30H3LL

N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 double island package; • RDS(on)* Qgindustry benchmark\n• Extremely low on-resistance RDS(on)• High avalanche ruggedness\n• Low gate drive power losses;

This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ V (P-channel) and STripFET™ VI DeepGATE™ (N-channel) technologies. The resulting device exhibits low on-state resistance and an FOM among the lowest in its voltage class.\n \n