N-channel 650 V, 0.205 typ., 14 A MDmesh M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features  Extremely low gate charge  Excellent output capacitance (Coss) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and improved vertical structure, the devices

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STMICROELECTRONICS

意法半导体

N沟道650 V、0.205 Ohm典型值、14 A MDmesh M2功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Extremely low gate charge

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STMICROELECTRONICS

意法半导体