丝印：APG40N10NF；Package：DFN5X6-8L；N-ChannelEnhancement Mode Field Effect Transistor

Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application

文件：1.90953 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

Automotive-grade N-channel 100 V, 20 mΩ typ., 18 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of m

文件：942.08 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道100 V、20 mOhm典型值、18 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 通过AEC-Q101认证 \n• 处于市面上最低的RDS(on) 行列 \n• 出色的品质因数（FoM） \n• 较低的Crss/Ciss 比值使得其具有更强的抗EMI能力 \n• 坚固的抗雪崩能力 \n• 具有可湿性侧面的封装;

ST

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：969.01 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features • Among the lowest RDS(on) on

文件：1.17964 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤18mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：272.06 Kbytes 页数：2 Pages

ISC

无锡固电