首页 >STP45N10F7>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STP45N10F7 | Isc N-Channel MOSFET Transistor •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤18mΩ •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
STP45N10F7 | N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
STP45N10F7 | N-Channel 100-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel100V,0.0145typ.,45A,STripFETVIIDeepGATEPowerMOSFETsinDPAK,I2PAKandTO-220packages Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Ultralowon-resistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel100V,0.0145typ.,45A,STripFETVIIDeepGATEPowerMOSFETsinDPAK,I2PAKandTO-220packages Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Automotive-gradeN-channel100V,20mΩtyp.,18A,STripFET™F7PowerMOSFETinaPowerFLAT™5x6package Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofm | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-ChannelEnhancementModeFieldEffectTransistor Features LowRDS(on)&FOM Extremelylowswitchingloss ExcellentstabilityanduniformityorInvertors Applications Consumerelectronicpowersupply Motorcontrol Synchronous-rectification IsolatedDC Synchronous-rectificationapplication | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH |
详细参数
- 型号：
STP45N10F7
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Rail/Tube
- 功能描述：
N-channel 100 V 0 013 Ohm typ 45 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
23+ |
TO-220 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ST/意法 |
21+ |
NA |
1000 |
只做原装,假一罚十 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
6008 |
原装正品现货 可开增值税发票 |
询价 | ||
ST(意法半导体) |
23+ |
TO-220 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST/意法 |
23+ |
TO-220 |
10 |
水星电子只做原装,支持一站式BOM配单 |
询价 | ||
STMicroelectronics |
18+ |
NA |
3186 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
23+ |
N/A |
90050 |
正品授权货源可靠 |
询价 | |||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ST |
2020+ |
TO-220 |
30870 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
ST |
20+ |
TO220 |
36500 |
原装现货/放心购买 |
询价 |
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