isc P-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=-42A@ TC=25℃ ·Drain Source Voltage- VDSS=- 60V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver·Power Tools ·UPS ·Motor Control

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ISC

无锡固电

丝印：42P6LLF6；Package：PowerFLAT；P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

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STMICROELECTRONICS

意法半导体

High avalanche ruggedness

文件：471.22 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

P沟道60 V、0.023 Ohm典型值、42 A STripFET F6功率MOSFET，PowerFLAT 5x6封装

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体