丝印：42P6LLF6；Package：PowerFLAT；P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

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STMICROELECTRONICS

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