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STL33N60DM6

N-channel 600 V, 125 m typ., 21 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STL33N60DM6

N沟道600 V、125 mOhm典型值、21 A MDmesh DM6功率MOSFET,PowerFLAT 8x8 HV封装; • 快速恢复体二极管 \n• 与上一代相比,具有更低的面积值 \n• 低栅极电荷、输入电容和电阻 \n• 经过100%雪崩测试 \n• 极高的dv / dt耐用性 \n• 稳压保护 \n• 强爬电距离封装;

该高压N沟道功率MOSFET是MDmesh DM6具有快速恢复二极管特性系列的一个产品。与前一代MDmesh技术相比,DM6将极低恢复电荷 (Qrr)、极短恢复时间 (trr) 以及出色的导通电阻 (RDS(on)), 与行业里最高效的开关特性相结合,非常适合用于效率要求苛刻的桥式拓扑和ZVS(零电压开关)移相转换器。\n\n

STSTMicroelectronics

意法半导体意法半导体集团

STB33N60DM6

N-channel600V,115mΩtyp.,25A,MDmeshDM6PowerMOSFETinaD2PAKpackage

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Applications •Switchingapplications Description Thishigh-voltageN-cha

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STF33N60DM6

N-channel600V,115mtyp.,25A,MDmeshDM6PowerMOSFETinaTO‑220FPpackage

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP33N60DM6

N-channel600V,115mtyp.,25A,MDmesh™DM6PowerMOSFETinaTO‑220package

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected •High-creepagepackage Description Thishigh-voltageN-channelPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

技术参数

  • Package:

    PowerFLAT 8x8 HV

  • Grade:

    Industrial

  • VDSS(V):

    600

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.14

  • Drain Current (Dc)_max(A):

    21

  • PTOT_max(W):

    150

  • Qg_typ(nC):

    35

  • Features:

    Fast recovery diode

  • Reverse Recovery Time_typ(ns):

    115

  • Qrr_typ(nC):

    520

  • Peak Reverse Current_nom(A):

    9

供应商型号品牌批号封装库存备注价格
ST/意法半导体
23+
PowerFLAT-8
6900
全新原装正品现货,支持订货
询价
ST/意法半导体
2021+
PowerFLAT-8
6900
原厂原装,假一罚十
询价
ST/意法半导体
24+
PowerFLAT-8
30000
原装正品公司现货,假一赔十!
询价
ST/意法半导体
24+
PowerFLAT-8
6000
全新原装深圳仓库现货有单必成
询价
ST/意法半导体
2022+
PowerFLAT-8
6900
原厂原装,假一罚十
询价
ST/意法半导体
21+
PowerFLAT-8
8080
只做原装,质量保证
询价
ST/意法半导体
25+
PowerFLAT-8
8880
原装认准芯泽盛世!
询价
ST/意法半导体
23+
PowerFLAT-8
8080
原装正品,支持实单
询价
ST/意法半导体
22+
PowerFLAT-8
2500
进口原装,优势现货
询价
ST
23+
PowerFLAT8x8HV
16900
正规渠道,只有原装!
询价
更多STL33N60DM6供应商 更新时间2025-7-27 13:01:00