N-channel 600 V, 125 m typ., 21 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：345.21 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N沟道600 V、125 mOhm典型值、21 A MDmesh DM6功率MOSFET，PowerFLAT 8x8 HV封装

该高压N沟道功率MOSFET是MDmesh DM6具有快速恢复二极管特性系列的一个产品。与前一代MDmesh技术相比，DM6将极低恢复电荷 (Qrr)、极短恢复时间 (trr) 以及出色的导通电阻 (RDS(on))， 与行业里最高效的开关特性相结合，非常适合用于效率要求苛刻的桥式拓扑和ZVS（零电压开关）移相转换器。 • 快速恢复体二极管 \n• 与上一代相比，具有更低的面积值 \n• 低栅极电荷、输入电容和电阻 \n• 经过100％雪崩测试 \n• 极高的dv / dt耐用性 \n• 稳压保护 \n• 强爬电距离封装;

ST

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N-channel 600 V, 115 m typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • High-creepage package Description This high-voltage N-channel Power MOSFET

文件：273.33 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-cha

文件：424.76 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：264.91 Kbytes 页数：12 Pages

STMICROELECTRONICS

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