Low gate input resistance

Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high po

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STMICROELECTRONICS

意法半导体

N沟道650 V、0.198 Ohm典型值、15 A MDmesh M5功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

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QFN

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上传：深圳市向鸿伟业电子有限公司

STM
DFN5X6

STM

信盛

上传：深圳市金芯世纪电子有限公司

ST
DFN5X6

ST

上传：深圳诚思涵科技有限公司