N沟道550 V、0.066 Ohm典型值、22.5 A MDmesh M5功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior • Extremely low RDS(on)\n• Low gate charge and input \n• capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 550 V, 0.066 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package

文件：1.12478 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：301.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages

文件：764.91 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：417.82 Kbytes 页数：2 Pages

ISC

无锡固电