N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness;

ST

意法半导体

丝印：260N4LF7；Package：PowerFLAT；N-channel 40 V, 0.85 m廓 typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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STMICROELECTRONICS

意法半导体

STM
DFN5X6

STM

信盛

上传：深圳市金芯世纪电子有限公司

ST
DFN5X6

ST

上传：深圳诚思涵科技有限公司

STM
DFN5X6

STM

信盛

上传：深圳市远进半导体有限公司