N-channel 650 V, 0.182 typ., 20 A, MDmeshTM DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series.

文件：385.79 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N沟道650 V、0.182 Ohm典型值、20 A MDmesh DM2功率MOSFET，PowerFLAT 8x8 HV封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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N-channel 650 V, 0.156 Ω typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-220 package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series.

文件：269.31 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.156 typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-247 package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series.

文件：269.25 Kbytes 页数：13 Pages

STMICROELECTRONICS

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