STL38DN6F7AG

Automotive-grade N-channel 60 V, 24 m typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package

Features •AEC-Q101qualified •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithan enhancedtrenchgatestructurethat

STL38DN6F7AG

汽车级双路N沟道60 V、25 mOhm典型值、10 A STripFET F7功率MOSFET，PowerFLAT 5x6双岛封装; • AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness;

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.\n\n