STL24NM60N

N-channel 600 V, 0.200 Ohm typ., 16 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package; • 100% avalanche tested\n• Low input capacitance and gate charge• Low gate input resistance;

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.\n \n

STL24NM60N

N-channel 600 V, 0.200 廓, 16 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

STP24NM60N

iscN-ChannelMOSFETTransistor

STP24NM60N

N-channel600V,0.168廓,17AMDmesh??IIPowerMOSFET

STW24NM60N

iscN-ChannelMOSFETTransistor

STW24NM60N

N-channel600V,0.168廓,17AMDmesh??IIPowerMOSFET