N-channel 600 V, 0.200 Ohm typ., 16 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested\n• Low input capacitance and gate charge• Low gate input resistance;

ST

意法半导体

N-channel 600 V, 0.200 廓, 16 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

文件：564.71 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.168 廓, 17 A MDmesh??II Power MOSFET

文件：996.27 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：398.78 Kbytes 页数：2 Pages

ISC

无锡固电