isc N-Channel MOSFET Transistor

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ISC

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N-channel 600 V, 0.168 廓, 17 A MDmesh??II Power MOSFET

文件：996.27 Kbytes 页数：19 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested\n• Low input capacitance and gate charge• Low gate input resistance;

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N-channel 600 V, 0.200 廓, 16 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

文件：564.71 Kbytes 页数：14 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：314.4 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET

Description These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref

文件：899.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

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