丝印：24NM60N；Package：D2PAK；N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET

Description These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref

文件：899.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：314.4 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道600 V、0.168 Ohm、17 A MDmesh(TM) II功率MOSFET，D2PAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

isc N-Channel MOSFET Transistor

文件：311.58 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.168 廓, 17 A MDmesh??II Power MOSFET

文件：996.27 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Low input capacitance and gate charge

文件：804.08 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体