isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.125Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Features ■ Excep

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STMICROELECTRONICS

意法半导体

N-channel 200 V, 0.10 廓, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET??Power MOSFET

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STMICROELECTRONICS

意法半导体

N沟道200 V、0.10 Ohm典型值、18 A StripFET功率MOSFET，TO-220封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

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