N-channel 600 V, 0.155 typ., 21 A MDmeshTM DM2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

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N沟道600 V、0.155 Ohm典型值、21 A MDmesh DM2功率MOSFET，PowerFLAT 8x8 HV封装

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

Extremely low gate charge and input capacitance

文件：1.11965 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge and input capacitance

文件：1.11965 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体