STW28N60DM2

Extremely low gate charge and input capacitance

STB28N60DM2

Extremelylowgatechargeandinputcapacitance

STF28N60DM2

N-channel600V,0.13廓typ.,21AMDmesh??DM2PowerMOSFETinaTO-220FPpackage

STL28N60DM2

N-channel600V,0.155typ.,21AMDmeshTMDM2PowerMOSFETinaPowerFLATTM8x8HVpackage

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode seri

STP28N60DM2

Extremelylowgatechargeandinputcapacitance