N沟道600 V、0.13 Ohm典型值、21 A MDmesh DM2功率MOSFET，TO-247封装

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS pha • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

Extremely low gate charge and input capacitance

文件：1.11965 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge and input capacitance

文件：1.11965 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.13 廓 typ., 21 A MDmesh??DM2 Power MOSFET in a TO-220FP package

文件：717.97 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 160mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.09 Kbytes 页数：2 Pages

ISC

无锡固电