STF28N60DM2

N-channel 600 V, 0.13 廓 typ., 21 A MDmesh??DM2 Power MOSFET in a TO-220FP package

STB28N60DM2

Extremelylowgatechargeandinputcapacitance

STL28N60DM2

N-channel600V,0.155typ.,21AMDmeshTMDM2PowerMOSFETinaPowerFLATTM8x8HVpackage

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode seri

STP28N60DM2

Extremelylowgatechargeandinputcapacitance

STW28N60DM2

Extremelylowgatechargeandinputcapacitance