N沟道100 V、0.027 Ohm典型值、8 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

该器件是采用第七代STripFET™ DeepGATE™技术开发的N沟道功率MOSFET，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。 • 超低导通电阻 \n• 经过100％雪崩测试;

ST

意法半导体

Ultra low on-resistance

文件：1.25311 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.21 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features  Among the lowest RDS(o

文件：1.05035 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体