丝印：30N10F7；Package：TO-220；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features  Among the lowest RDS(o

文件：1.05035 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.21 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 0.02 Ohm typ., 32 A STripFET F7 Power MOSFET in a TO-220 package

该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。\n • 处于市面上最低的RDS(on) 行列\n• 出色的品质因数（FoM）• 较低的Crss /Ciss 比值使得其具有更强的抗EMI能力\n• 坚固的抗雪崩能力;

ST

意法半导体

N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a DPAK package

文件：1.06865 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：324.52 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced SGT technology

文件：862.08 Kbytes 页数：4 Pages

DOINGTER

杜因特