丝印：30N10F7；Package：TO-220；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features  Among the lowest RDS(o

文件：1.05035 Mbytes 页数：13 Pages

STMICROELECTRONICS

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丝印：30N10F7；Package：DPAK；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a DPAK package

文件：1.06865 Mbytes 页数：16 Pages

STMICROELECTRONICS

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