丝印：30N80K5；Package：DPAK；N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a D²PAK package

Features Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technol

文件：940.6 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：30N80K5；Package：TO-247；N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a TO-247 package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：723.87 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体