丝印：30NP1812G；Package：DFN5X6-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP1812G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON)

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