丝印：30N80K5；Package：TO-247；N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a TO-247 package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：723.87 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.15 Ohm典型值、24 A MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a D²PAK package

Features Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technol

文件：940.6 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

ON
TO-3P

ON

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ST
TO-3P

ST

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