丝印：L20NM20N；Package：PowerFLAT；N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET

General Features ■ WORLDWIDE LOWEST GATE CHARGE ■ TYPICAL RDS(on) = 0.088Ω ■ IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm MAX) ■ VERY LOW THERMAL RESISTANCE ■ LOW GATE RESISTANCE ■ LOW INPUT CAPACITANCE ■ HIGH dv/dt and AVALANCHE CAPABILITIES DESCRIPTION This 200V MO

文件：288.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.088廓 - 20A PowerFLAT??ULTRA LOW GATE CHARGE MDmesh??II MOSFET

文件：453.63 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.088廓 - 20A PowerFLAT??ULTRA LOW GATE CHARGE MDmesh??II MOSFET

文件：453.63 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT™ ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

ST

意法半导体