N沟道650 V、0.124 Ohm典型值、20 A MDmesh M2功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

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N-channel 650 V, 0.124 (ohm0 typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

文件：815.69 Kbytes 页数：15 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

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ISC

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N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes 页数：23 Pages

STMICROELECTRONICS

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