N沟道600 V、0.115 Ohm典型值、21 A MDmesh DM2功率MOSFET，PowerFLAT 8x8 HV封装

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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N-channel 600 V, 0.115(ohm) typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

文件：784.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

文件：1.11737 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

文件：1.11737 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体