STP33N60DM2

N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

STB33N60DM2

N-channel600V,0.110廓typ.,24AMDmesh??DM2PowerMOSFETinD짼PAK,TO-220andTO-247packages

STB33N60DM2

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V ·Fast-recoverybodydiode APPLICATIONS ·Switchingapplications

STF33N60DM2

N-channel600V,0.110Ωtyp.,24AMDmesh™DM2PowerMOSFETinTO-220FPpackage

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Applications Switchingapplications Description ThishighvoltageN-channelPowerMOSFETis partof

STL33N60DM2

N-channel600V,0.115(ohm)typ.,21AMDmeshDM2PowerMOSFETinaPowerFLAT8x8HVpackage

STW33N60DM2

N-channel600V,0.110廓typ.,24AMDmesh??DM2PowerMOSFETinD짼PAK,TO-220andTO-247packages