N沟道600 V、0.110 Ohm典型值、24 A MDmesh DM2功率MOSFET，TO-220封装

These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phas • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

文件：1.11737 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

文件：1.11737 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

文件：1.11737 Mbytes 页数：20 Pages

STMICROELECTRONICS

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 24A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V · Fast-recovery body diode APPLICATIONS · Switching applications

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N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of

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STMICROELECTRONICS

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