首页 >STGWT60V60DF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STGWT60V60DF | Marking：GWT60V60DF；Package：TO-3P；Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | |
STGWT60V60DF | Trench gate field-stop IGBT, V series 600 V, 60 A very high speed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | |
STGWT60V60DF | Package：TO-3P-3，SC-65-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 375W TO3P | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | |
Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Lowthermalresistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
产品属性
- 产品编号：
STGWT60V60DF
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
卷带（TR）
- IGBT 类型：
沟槽型场截止
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.3V @ 15V，60A
- 开关能量：
750µJ（开），550µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
60ns/208ns
- 测试条件：
400V，60A，4.7 欧姆，15V
- 工作温度：
-55°C ~ 175°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-3P-3，SC-65-3
- 描述：
IGBT 600V 80A 375W TO3P
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
TO-3P-3,SC-65-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ST |
23+ |
TO-3P |
6996 |
只做原装正品现货 |
询价 | ||
ST/意法半导体 |
22+ |
TO-3P-3 |
6008 |
原装正品现货 可开增值税发票 |
询价 | ||
STMicroelectronics |
24+ |
NA |
3568 |
进口原装正品优势供应 |
询价 | ||
ST |
25+23+ |
TO-3P |
35341 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
19+ |
TO-3P |
32000 |
原装正品,现货特价 |
询价 | ||
STM |
1809+ |
SMD |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
22+ |
NA |
202 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST/意法半导体 |
24+ |
TO-3P-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
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