GWT60V60DF中文资料意法半导体数据手册PDF规格书

厂商型号	GWT60V60DF
功能描述	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
文件大小	1.62941 Mbytes
页面数量	20 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-29 16:53:00
人工找货	GWT60V60DF价格和库存，欢迎联系客服免费人工找货

Features

• Maximum junction temperature: TJ = 175 °C

• Tail-less switching off

• VCE(sat) = 1.85 V (typ.) @ IC = 60 A

• Tight parameter distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the V series

of IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of very high

frequency converters. Furthermore, a positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.