GWT60V60DF中文资料意法半导体数据手册PDF规格书

特性 Features

• Maximum junction temperature: TJ = 175 °C

• Tail-less switching off

• VCE(sat) = 1.85 V (typ.) @ IC = 60 A

• Tight parameter distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

描述 Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the V series

of IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of very high

frequency converters. Furthermore, a positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.