Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

文件：1.62941 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GWT60V60DF；Package：TO-3P；Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

文件：1.62941 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

文件：1.62941 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

文件：1.7345 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：1.32825 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体