丝印：GWT80H65DFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

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High speed switching series

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650 V、80 A高速沟槽栅场截止HB系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A \n• Tight parameter distribution \n• Safe paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Ve;

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Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 120A 469W TO3P-3L

STMICROELECTRONICS

意法半导体